Reactive Ion Etching of Si Substrate using Three-Dimensional Aluminum Masks
نویسندگان
چکیده
منابع مشابه
Modeling of Reactive Ion Etching for Si/Si02 Systems
Molecular dynamics (MD) simulations have been used to study surface reaction dynamics of Si and Si02 etching by halogens. To perform classical MD simulations for Si02 etching reaction by halogens (C1 or F), we have constructed new sets of twoand three-body interatomic potential functions based on potential energy data obtained from ab initio quantum mechanical calculations of the electronic sta...
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ژورنال
عنوان ژورنال: Journal of the Vacuum Society of Japan
سال: 2009
ISSN: 1882-4749,1882-2398
DOI: 10.3131/jvsj2.52.455